A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology

@article{Aust1995A9M,
  title={A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology},
  author={M. I. S. Aust and Huei Bin Wang and M. Biedenbender and Richard Lai and D. A. Streit and P. H. Liu and G. S . Dow and B. Allen},
  journal={IEEE Microwave and Guided Wave Letters},
  year={1995},
  volume={5},
  pages={12-14}
}
A monolithic W-band two-stage balanced power amplifier has been developed using 0.1-μm AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMT technology. This monolithic power amplifier has demonstrated an output power of 102 mW and a small signal gain of 9 dB with input/output return losses of better than 10 dB at 94 GHz. Moreover, this monolithic chip is fabricated using production GaAs-based HEMT MMIC technology and a good yield is obtained. The circuit design relies on extensive EM analysis of… CONTINUE READING