A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

  title={A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput},
  author={Kwang-Jin Lee and Beak-Hyung Cho and Woo-Yeong Cho and Sangbeom Kang and Byung-Gil Choi and Hyung-Rok Oh and Chang-Soo Lee and Hong Joo Kim and Joon-Min Park and Qi Wang and Mu-Hui Park and Yu-Hwan Ro and Joon-Yong Choi and Ki-Sung Kim and Young-Ran Kim and In-Cheol Shin and Ki-won Lim and Ho-Keun Cho and Chang-Han Choi and Won-ryul Chung and Du-Eung Kim and Yong-Jin Yoon and Kwang-Suk Yu and Gi-Tae Jeong and Hong-Sik Jeong and Choong-Keun Kwak and Chang-Hyun Kim and Kinam Kim},
  journal={IEEE Journal of Solid-State Circuits},
A 512 Mb diode-switch PRAM has been developed in a 90 nm CMOS technology. The vertical diode-switch using the SEG technology has achieved minimum cell size and disturbance-free core operation. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are proposed. The 512 Mb PRAM has achieved read throughput of 266 MB/s through the proposed schemes. The write throughput was 0.54 MB/s in internal x2 write mode, and increased to 4.64 MB/s with x16… CONTINUE READING
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A 0.1 m 1.8V 256Mb 66MHz synchronous burst PRAM

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A 0.18 m 3.0V 64Mb non-volatile phase-transition random access memory (PRAM)

  • W. Y. Cho
  • IEEE ISSCC Dig. Tech. Papers, 2004, p. 40.
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