A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station

@article{Ui2007A82,
  title={A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station},
  author={Norihiko Ui and Hironao Sano and Seigo Sano},
  journal={2007 IEEE/MTT-S International Microwave Symposium},
  year={2007},
  pages={1259-1262}
}
A 2-stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-stage amplifier up with the 30 W driver stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W driver amplifier) and -50… CONTINUE READING
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A Highly Uniform and Reliable AlGaN/GaN HEMT", 2005 CS MANTECH

  • J. Nikaido
  • 2005
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