A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

@article{Xie2016A7F,
  title={A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels},
  author={Ruilong Xie and Pietro Montanini and Kerem Akarvardar and Neeraj Kumar Tripathi and B. S. Haran and Shane A. Johnson and Terence B. Hook and B. Hamieh and Daniel Corliss and Junli Wang and Xin Miao and John R. Sporre and J. Fronheiser and Nicolas Loubet and M. Sung and Sabine Sieg and Shogo Mochizuki and Christopher Prindle and S. Seo and Andrew Koichi Greene and Jeffrey Shearer and Alison Raab Labonte and Susan S. Fan and Lars Liebmann and Robin Chao and Abraham Arceo and Kisup Chung and Kwonsu Cheon and Praneet Adusumilli and H. Amanapu and Zhaoxia Bi and Jungho Cha and H. Ming Chen and R. Conti and Rohit Galatage and Oleg Gluschenkov and V. Kamineni and K. Kim and Choonghyun Lee and Fee-li Lie and Zuoguang Liu and Sanjay V Mehta and Eric R. Miller and Hiroaki Niimi and Chengyu C. Niu and Chul-soon Park and Dongho Park and Mark V. Raymond and Bhagawan Sahu and Muthumanickam Sankarapandian and Shariq R. Siddiqui and Richard G. Southwick and Lidong Sun and C. Surisetty and Stan Tsai and Sungseob Whang and Pengyuan Xu and Yongan Xu and Chun-Chen Yeh and Peter Zeitzoff and Jingyun Zhang and Jun-Tao Li and James J. Demarest and J. C. Arnold and Donald F. Canaperi and Don Dunn and Nelson Felix and Dinesh Gupta and Hemanth Jagannathan and Siva Kanakasabapathy and Walter Kleemeier and Cathy Labelle and M. Mottura and Phil Oldiges and Spyridon Skordas and Theodorus E. Standaert and Tenko Yamashita and Matthew E. Colburn and M. H. Na and Vamsi K. Paruchuri and Sean Lian and Rama Divakaruni and T. Gow and Seung Chul Lee and Andreas Knorr and Huiming Bu and Mukesh Khare},
  journal={2016 IEEE International Electron Devices Meeting (IEDM)},
  year={2016},
  pages={2.7.1-2.7.4}
}
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications. 
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