A 70–100GHz direct-conversion transmitter and receiver phased array chipset in 0.18µm SiGe BiCMOS technology

@article{Shahramian2012A7D,
  title={A 70–100GHz direct-conversion transmitter and receiver phased array chipset in 0.18µm SiGe BiCMOS technology},
  author={S. Shahramian and Yves Baeyens and Young-Kai Chen},
  journal={2012 IEEE Radio Frequency Integrated Circuits Symposium},
  year={2012},
  pages={123-126}
}
This paper presents a transmitter and receiver phased array chipset fabricated in a 0.18μm SiGe BiCMOS process with fT/fMAX of 240/270GHz. Each chip comprises four phased array elements with distributed calibration memory and calibrated direct up and down-conversion mixer chain. Both transmitter and receiver arrays operate from 1.5V and 2.5V power supplies and consume 1W each. Each receive channel has a conversion gain of 33 dB and noise figure of <; 7dB from 75-95GHz. Each transmit channel has… CONTINUE READING
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