A 65nm CMOS wide-band LNA with continuously tunable gain from 0dB to 24dB

Abstract

A bi-directional active resistor structure with quasifloating gate MOS transistors and non-linearity compensation is used in a resistive negative feedback wide-band LNA implementation enabling a continuously tunable gain from 0dB to 24dB. The LNA has been realized in 65nm CMOS with a minimum noise figure of 2.5dB and IIP3 of -8dBm at highest gain. The LNA… (More)
DOI: 10.1109/ISCAS.2013.6571951

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@article{Sturm2013A6C, title={A 65nm CMOS wide-band LNA with continuously tunable gain from 0dB to 24dB}, author={Johannes Sturm and Xinbo Xiang and Harald Pretl}, journal={2013 IEEE International Symposium on Circuits and Systems (ISCAS2013)}, year={2013}, pages={733-736} }