A 64×8 Pixel 3-D CMOS Time Of Flight Image Sensor for Car Safety Applications

@article{Elkhalili2006A6P,
  title={A 64×8 Pixel 3-D CMOS Time Of Flight Image Sensor for Car Safety Applications},
  author={O. Elkhalili and Olaf M. Schrey and Wiebke Ulfig and Werner Brockherde and Bedrich J. Hosticka and Peter Mengel and Ludwig Listl},
  journal={2006 Proceedings of the 32nd European Solid-State Circuits Conference},
  year={2006},
  pages={568-571}
}
  • O. Elkhalili, O. Schrey, L. Listl
  • Published 1 September 2006
  • Computer Science
  • 2006 Proceedings of the 32nd European Solid-State Circuits Conference
For car safety applications a 64times8 pixel 3D CMOS image sensor based on the time-of-flight principle (TOF) has been developed and successfully tested. The illumination source used is a pulse modulated (PM) class 1 laser operating at 910nm wavelength. The sensor employs the so called "multiple double short time integration (MDSI)", which compensates for sensor as well as scene nonidealities, like reflectance variations, and it suppresses the effects of background illumination. An optimised… 

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References

SHOWING 1-7 OF 7 REFERENCES

A 4/spl times/64 pixel CMOS image sensor for 3-D measurement applications

A 4/spl times/64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is

Novel pixel architecture with inherent background suppression for 3D time-of-flight imaging

Four new pixel architectures suppressing background illumination and/or improving the ratio of modulated signal to background signal at the pixel-output level were developed and will be presented in this paper, together with the theoretical principle of operation and the expected performance.

Entwicklung von opischen 3D CMOS-Bildsensoren auf der Basis der Pulslaufzeitmessung

In this thesis, a 3D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. It uses an active pulsed class 1 laser operating at 910nm to illuminate a 3D scene. The

Fast range imaging by CMOS sensor array through multiple double short time integration (MDSI)

The presented novel approach for direct range image acquisition is based on a CMOS image sensor with extremely short integration time and a defined flash illumination by fast infrared laser diodes, guaranteeing high robustness, small size and low cost under high volume production.

A CMOS photosensor array for 3D imaging using pulsed laser

A 32×2 pixel optical time of flight range sensor in standard 0.5 μm CMOS acquires up to 20k BD-images/s combines CDS, S&H, multiple double short time integration, a high-speed synchronous shutter,

Hosticka, “A 4×64 pixel CMOS image sensor for 3-D measurement applications

  • IEEE Journal of Solid-State Circuits,
  • 2004

A 4 × 64 pixel CMOS image sensor for 3 - D measurement applications ”

  • Papers IEEE International Solid - State Circuits Conf .
  • 2001