A 60GHz Class-E Power Amplifier in SiGe

@article{ValdesGarcia2006A6C,
  title={A 60GHz Class-E Power Amplifier in SiGe},
  author={Alberto Valdes-Garcia and S. K. Reynolds and U. R. Pfeiffer},
  journal={2006 IEEE Asian Solid-State Circuits Conference},
  year={2006},
  pages={199-202}
}
A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match. The prototype IC is a single-ended single stage design that operates from a 1.2V supply and employs an area of 0.98mm2. Measurement results show a saturated output power >11.1dBm with peak PAE>15% from 55-60GHz. At 58GHz it… CONTINUE READING
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