A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS

@article{Thyagarajan2014A6G,
  title={A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS},
  author={Siva V. Thyagarajan and Ali M. Niknejad and Christopher D. Hull},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2014},
  volume={61},
  pages={2253-2262}
}
CMOS technology scaling has enabled the design of high speed and efficient digital circuits. However, the continued scaling is detrimental to the design of RF and mm-wave systems. Higher sensitivity to process variations and inaccuracies in modeling of active and passive devices pose another challenge to the design of these systems at deep submicron technology nodes. This paper describes the design of a 60 GHz power amplifier in 28 nm CMOS technology. A drain-source neutralization technique… CONTINUE READING
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