A 6.5-mW receiver front-end for Bluetooth in 0.18-/spl mu/m CMOS

@article{Beffa2002A6R,
  title={A 6.5-mW receiver front-end for Bluetooth in 0.18-/spl mu/m CMOS},
  author={Federico Beffa and Rolf Vogt and W. Bachtold and Emil Zellweger and Urs Lott},
  journal={2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)},
  year={2002},
  pages={391-394}
}
This paper describes the design of a low-IF receiver front-end for Bluetooth fabricated in a 0.18 /spl mu/m CMOS technology. The chip includes an LNA and an image-reject mixer and provides a down-conversion gain to the 2 MHz IF of 21.4 dB, an image rejection of 28 dB and a NF of 13.9 dB consuming only 6.5 mW at 1.8 V. 

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A fully integrated transceiver for Bluetooth