A 6.5-kV ESD-protected 3-5-GHz ultra-wideband BiCMOS low-noise amplifier using interstage gain roll-off compensation

@article{Liu2005A6E,
  title={A 6.5-kV ESD-protected 3-5-GHz ultra-wideband BiCMOS low-noise amplifier using interstage gain roll-off compensation},
  author={Mingxu Liu and Jan Craninckx and N Iyer and Maarten Kuijk and A. Barel},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2005},
  volume={54},
  pages={1698-1706}
}
Design and validation of an electrostatic discharge (ESD)-protected ultra-wideband low-noise amplifier (LNA) is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 /spl plusmn/ 0.3 dB, minimum noise figure of 2.1 dB, and a group delay variation of /spl plusmn/30 ps from 3 to 5 GHz, even though it uses a less advanced 0.35… CONTINUE READING

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A 6.5-kV ESD-protected 3–5-GHz ultra-wideband BiCMOS low noise amplifier using interstage gain roll-off compensation

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