A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

@article{Chung2011A51,
  title={A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW},
  author={Hoeju Chung and B. Jeong and ByungJun Min and Youngdon Choi and Beak-Hyung Cho and Junho Shin and Jinyoung Kim and Jung Sunwoo and Joon-min Park and Q. Wang and Yong-jun Lee and Sooho Cha and Dukmin Kwon and Sang-Tae Kim and Sunghoon Kim and Yoohwan Rho and Mu-Hui Park and Jaewhan Kim and I. Song and Sung-Bu Jun and Jaewook Lee and KiSeung Kim and Ki-won Lim and W. Chung and ChangHan Choi and Ho-Keun Cho and In-Cheol Shin and Woochul Jun and Seokwon Hwang and Ki-Whan Song and KwangJin Lee and Sang-whan Chang and Woo-Yeong Cho and Jei-Hwan Yoo and Y. Jun},
  journal={2011 IEEE International Solid-State Circuits Conference},
  year={2011},
  pages={500-502}
}
  • Hoeju Chung, B. Jeong, +32 authors Y. Jun
  • Published 2011
  • Computer Science
  • 2011 IEEE International Solid-State Circuits Conference
In mobile systems, the demand for the energy saving continues to require a low power memory sub-system. During the last decade, the floating-gate flash memory has been an indispensable low power memory solution. However, NOR flash memory has begun to show difficulties in scaling due to the device's reliability and yield issues. Over the past few years, phase-change random access memory (PRAM) has emerged as an alternative non-volatile memory (NVM) owing to its promising scalability and low cost… Expand
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A 45nm 1Gb 1.8V phase-change memory
Floating-gate Flash memories have been able so far to satisfy the market requirements, especially for the portable equipments, and to be the mainstream non-volatile memory (NVM) technology [1].Expand
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput
TLDR
A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described, which achieves read throughput of 266MB/S and maximum write throughput of 4.64 MB/S with a 1.8V supply. Expand