A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

  title={A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW},
  author={Hoeju Chung and Byung Hoon Jeong and ByungJun Min and Youngdon Choi and Beak-Hyung Cho and Junho Shin and Jinyoung Kim and Jung Sunwoo and Joon-min Park and Qi Wang and Yong-jun Lee and Sooho Cha and Dukmin Kwon and Sangtae Kim and Sunghoon Kim and Yoohwan Rho and Mu-Hui Park and Jaewhan Kim and Ickhyun Song and Sung-Bu Jun and Jaewook Lee and KiSeung Kim and Ki-won Lim and Won-ryul Chung and ChangHan Choi and Ho-Keun Cho and In-Cheol Shin and Woo-Jung Jun and Seokwon Hwang and Ki-Whan Song and Kwangjin Lee and Sang-whan Chang and Woo-Yeong Cho and Jei-Hwan Yoo and Young-Hyun Jun},
  journal={2011 IEEE International Solid-State Circuits Conference},
  • Hoeju ChungB. Jeong Y. Jun
  • Published 7 April 2011
  • Computer Science
  • 2011 IEEE International Solid-State Circuits Conference
In mobile systems, the demand for the energy saving continues to require a low power memory sub-system. During the last decade, the floating-gate flash memory has been an indispensable low power memory solution. However, NOR flash memory has begun to show difficulties in scaling due to the device's reliability and yield issues. Over the past few years, phase-change random access memory (PRAM) has emerged as an alternative non-volatile memory (NVM) owing to its promising scalability and low cost… 

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