A 48–61 GHz LNA in 40-nm CMOS with 3.6 dB minimum NF employing a metal slotting method

Abstract

This paper presents a low noise amplifier realized in 40-nm CMOS technology for the 60 GHz ISM band. To reduce the noise contribution from the input passive structure, a new metal slotting method is applied to the transmission line for increasing the effective conducting cross-section area. The design incorporates additional noise matching between the… (More)

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