A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS

@article{Balteanu2012A42,
  title={A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS},
  author={Andreea Balteanu and Ioannis Sarkas and Eric Dacquay and Alexander Tomkins and S. P. Voinigescu},
  journal={2012 IEEE Radio Frequency Integrated Circuits Symposium},
  year={2012},
  pages={319-322}
}
A novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45 GHz with 18.3 dB saturated gain, >;14.5 Vpp differential output swing, a drain efficiency of 21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at 45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown. 

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