A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm Psat and 16% PAE in 45-nm SOI CMOS

@article{Agah2013A4T,
  title={A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm Psat and 16% PAE in 45-nm SOI CMOS},
  author={Amir Agah and Wei Wang and Peter M. Asbeck and L. E. Larson and James F. Buckwalter},
  journal={2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)},
  year={2013},
  pages={249-252}
}
A novel stacked FET digital-to-RF converter is implemented in 45-nm SOI CMOS, which shares DC current through an I/Q digital-to-analog converter (DAC), I/Q mixer, and stacked-FET PA to provide high output power. The proposed architecture transmits at 1.25 Gbps for QPSK at 45GHz. This transmitter exhibits a 21.3-dBm saturated output power, while achieving a peak PAE of 16%. The circuit occupies 0.3 mm2 including pads, while the PAE and Psat remains above 13% and 18 dBm from 42 to 47 GHz. 
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