A 4.8-6 GHz IEEE 802.11 a WLAN SiGe-bipolar power amplifier with on-chip output matching

@article{Bakalski2005A4G,
  title={A 4.8-6 GHz IEEE 802.11 a WLAN SiGe-bipolar power amplifier with on-chip output matching},
  author={Winfried Bakalski and A O Vasylyev and Werner Simburger and Mikael Kall and A. L. Schmid and Krzysztof Kitliński},
  journal={European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005},
  year={2005},
  pages={481-483}
}
A fully integrated 4.8-6 GHz wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1/spl times/0.9 mm/sup 2/. At 1 V to 2.4 V, the maximum output power level is 19 dBm (22 % PAE) to 26.3 dBm (28.5% PAE) at 5.25 GHz with a maximum small signal gain of 33 dB. The maximum average output… CONTINUE READING