A 4 . 2 K Very High-Gain / Modulation Factor Silicon Detector / Modulator

@inproceedings{Gutierrez2017A4,
  title={A 4 . 2 K Very High-Gain / Modulation Factor Silicon Detector / Modulator},
  author={E. Gutierrez and Svetlana Koshevaya and P. Kolev and Jason Deen},
  year={2017}
}
An n-well ion-implanted resistor is shown to work as a very-linear high-gain photodetector at 4.2 K. We take advantage of freeze-out and light-assisted carrier ionisation effects to create a photodetector with a current-gain factor G from 1 x 1 0 ~ to 1 . 6 ~ 1 0 ~ . Experimental results show that at the current gain of 1.6x106, excellent linearity in… CONTINUE READING