A 36 ns 1 Mbit CMOS EPROM with new data sensing technique

A 36-ns, 1-Mb EPROM using a unique pseudodifferential sensing technique for high speed and a new noise immunity technique has been developed. In order to achieve both high speed and small die size, a newly developed pseudodifferential sensing technique with single-ended bit lines (one transistor/cell) and only two reference bit lines has been implemented… CONTINUE READING