A 35 ns 64 Mb DRAM using on-chip boosted power supply
@article{Lee1992A3N, title={A 35 ns 64 Mb DRAM using on-chip boosted power supply}, author={Dong-Jae Lee and Yong-Sik Seok and Do-Chan Choi and Jae-Hyeong Lee and Young-Rae Kim and Hyeun-Su Kim and Dong-Soo Jun and O. H. Kwon}, journal={1992 Symposium on VLSI Circuits Digest of Technical Papers}, year={1992}, pages={64-65} }
An on-chip boosted power supply is necessary for ease of layout and high speed in high density DRAMs. The technique of TTL conversion is a key to designing high speed DRAMs for 3-V operation. The authors present the generation and regulation of an on-chip power supply (V/sub pp/) within 50 mV of the optimum level during operation for a given V/sub cc/. In addition to the regulated V/sub cc/ scheme, improved interface circuit techniques are employed to achieve fast input and output conversion…
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