A 35 ns 64 Mb DRAM using on-chip boosted power supply

@article{Lee1992A3N,
  title={A 35 ns 64 Mb DRAM using on-chip boosted power supply},
  author={Dong-Jae Lee and Yong-Sik Seok and Do-Chan Choi and Jae-Hyeong Lee and Young-Rae Kim and Hyeun-Su Kim and D. Jun and O. Kwon},
  journal={1992 Symposium on VLSI Circuits Digest of Technical Papers},
  year={1992},
  pages={64-65}
}
An on-chip boosted power supply is necessary for ease of layout and high speed in high density DRAMs. The technique of TTL conversion is a key to designing high speed DRAMs for 3-V operation. The authors present the generation and regulation of an on-chip power supply (V/sub pp/) within 50 mV of the optimum level during operation for a given V/sub cc/. In addition to the regulated V/sub cc/ scheme, improved interface circuit techniques are employed to achieve fast input and output conversion… Expand
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