A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

@article{Liu2008A3W,
  title={A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding},
  author={Fei Liu and R. Yu and A. M. Young and J. Doyle and Xinlin Wang and Lcathen Shi and K.-N. Chen and Xia Li and D. A. Dipaola and DirckW. Brown and C. T. Ryan and J. Hagan and K. Wong and Minhua Lu and Xiaoxiong Gu and N. Klymko and E. Perfecto and A. G. Merryman and K. A. Kelly and Sampath Purushothaman and S. J. Koester and Robert Wisnieff and Wilfried E. Haensch},
  journal={2008 IEEE International Electron Devices Meeting},
  year={2008},
  pages={1-4}
}
A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 mum), small critical dimension (1.5 mum), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom wafer. The process also features thinning of the top wafer to 20 mum and a Cu backside BEOL on… CONTINUE READING
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