A 300μW 1.9GHz CMOS Oscillator Utilizing Micromachined Resonators

Abstract

A low-power, low phase-noise 1.9GHz RF oscillator is presented. The oscillator utilizes a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18μm CMOS process. This paper addresses design issues involved in co-designing micromachined resonators with CMOS circuitry to realize ultra-low power RF transceiver components. The… (More)

Topics

5 Figures and Tables

Statistics

01020'03'05'07'09'11'13'15'17
Citations per Year

129 Citations

Semantic Scholar estimates that this publication has 129 citations based on the available data.

See our FAQ for additional information.

Cite this paper

@inproceedings{Otis2001A31, title={A 300μW 1.9GHz CMOS Oscillator Utilizing Micromachined Resonators}, author={Brian P. Otis and Jan M. Rabaey}, year={2001} }