A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anything

@article{Wagemans1998A3M,
  title={A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anything},
  author={Anja Wagemans and Ronald Dekker and A. Hoogstraate and H. Maas and Anton M. H. Tombeur and Jan van Sinderen},
  journal={1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156)},
  year={1998},
  pages={250-251}
}
A fully-integrated voltage controlled oscillator (VCO) and RF diversity receiver are fabricated in a bipolar IC technology called silicon-on-anything. With this silicon based technology it is possible to fabricate low-power transistors, as well as integrated inductors that have a quality factor of 225 at 1 GHz. The inductors in the VCO exhibit a maximum quality factor of 29 at 4 GHz, with a self-resonance frequency of 10.5 GHz. 

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A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz CVO in silicon on anything

  • A. Wagemans, P. Baltus, +4 authors G. van Sinderen
  • ISSCC Dig. Tech. Papers , Feb. , pp. 250–251.
  • 1998
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