A 3 V, 0.35 /spl mu/m CMOS Bluetooth receiver IC

@article{Sheng2002A3V,
  title={A 3 V, 0.35 /spl mu/m CMOS Bluetooth receiver IC},
  author={Wenjun Sheng and Bo Xia and Ahmed Emira and Chunyu Xin and Ari Yakov Valero-L{\'o}pez and Sung Tae Moon and Edgar S{\'a}nchez-Sinencio},
  journal={2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)},
  year={2002},
  pages={107-110}
}
  • W. Sheng, B. Xia, E. Sánchez-Sinencio
  • Published 3 June 2002
  • Engineering
  • 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)
This paper presents a monolithic low-IF Bluetooth receiver. The highlights of the receiver include a low-power active complex filter with a non-conventional tuning scheme and a high performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25 mm/sup 2/ die using TSMC 0.35 /spl mu/m standard CMOS process. -82 dBm sensitivity at 1e-3 BER, -10 dBm IIP3 and 15 dB noise figure were achieved In the measurements. 
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