A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact

@article{Tiwari2019A3T,
  title={A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact},
  author={Ravi Tiwari and Narendra Parihar and Karansingh Thakor and Hiu Yung Wong and S. Motzny and Munkang Choi and Victor Moroz and Souvik Mahapatra},
  journal={IEEE Transactions on Electron Devices},
  year={2019},
  volume={66},
  pages={2086-2092}
}
The time kinetics of interface trap generation and passivation (<inline-formula> <tex-math notation="LaTeX">$\Delta {N} _{\textsf {IT}}$ </tex-math></inline-formula>) and its contribution (<inline-formula> <tex-math notation="LaTeX">$\Delta {V} _{\textsf {IT}}$ </tex-math></inline-formula>) during and after negative bias temperature instability (NBTI) stress is calculated by using Sentaurus TCAD. The framework consists of Sentaurus process for the formation of realistic device structures and to… CONTINUE READING

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