A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology

@article{Shiramizu2005A3G,
  title={A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology},
  author={Nobuhiro Shiramizu and Toru Masuda and Mitsuo Tanabe and Katsuyoshi Washio},
  journal={2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers},
  year={2005},
  pages={39-42}
}
We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA… CONTINUE READING
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