A 220-to-275GHz traveling-wave frequency doubler with −6.6dBm Power at 244GHz in 65nm CMOS

@article{Momeni2011A2T,
  title={A 220-to-275GHz traveling-wave frequency doubler with −6.6dBm Power at 244GHz in 65nm CMOS},
  author={Omeed Momeni and Ehsan Afshari},
  journal={2011 IEEE International Solid-State Circuits Conference},
  year={2011},
  pages={286-288}
}
There is a growing interest in using CMOS technology in the mm-Wave and terahertz frequency ranges for applications such as spectroscopy, imaging, compact range radars, and remote sensing [1]. Tunable signal sources are one of the main blocks in any such systems. Fundamental frequency voltage-controlled oscillators (VCOs) are widely employed for signal generation. However, CMOS VCOs suffer from low tuning range and low output power due to poor quality factor of varactors at high mm-Wave… CONTINUE READING

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