A 20 GHz bandwidth, 4 b photoconductive-sampling time-interleaved CMOS ADC

@article{Nathawad2003A2G,
  title={A 20 GHz bandwidth, 4 b photoconductive-sampling time-interleaved CMOS ADC},
  author={L. Y. Nathawad and Ryohei Urata and B. Wooley and D. Miller},
  journal={2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.},
  year={2003},
  pages={320-496 vol.1}
}
GaAs photoconductive switches are integrated with two parallel 4 b CMOS ADC channels for time-interleaved sampling of wideband signals. Peak SNDR exceeding 23 dB has been measured for inputs up to 20 GHz. Each channel dissipates 70 mW and occupies an area of 150 /spl mu/m-450 /spl mu/m in a 0.25 /spl mu/m CMOS technology. 

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