A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Abstract

Article history: Received 23 June 2015 Received in revised form 1 December 2015 Accepted 1 December 2015 Available online xxxx A 2-D analytical threshold-voltage model for ultra-thin-body MOSFET with buried insulator and high-k gate dielectric is established by solving the 2-D Poisson's equation for the gate-dielectric, channel and buried-insulator regions… (More)
DOI: 10.1016/j.microrel.2015.12.004

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