A 2-D analytical solution for SCEs in DG MOSFETs

@article{Liang2004A2A,
  title={A 2-D analytical solution for SCEs in DG MOSFETs},
  author={Xiaoping Liang and Yuan Taur},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={1385-1391}
}
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for undoped (or lightly doped) double-gate (DG) MOSFETs in the subthreshold region by solving Poissons equation in a 2-D boundary value problem. It is shown that the subthreshold current, short-channel threshold voltage rolloff and subthreshold slope predicted by the analytical solution are in close agreement with 2-D numerical simulation results for both symmetric and asymmetric DG MOSFETs without the need of any… CONTINUE READING
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