A 2-D Analytical Model for Double-Gate Tunnel FETs

@article{Gholizadeh2014A2A,
  title={A 2-D Analytical Model for Double-Gate Tunnel FETs},
  author={Mahdi Gholizadeh and Seyed Ebrahim Hosseini},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={1494-1500}
}
This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect transistors (TFETs) by solving the 2-D Poisson's equation. From the potential profile, the electric field is derived and then the drain current expression is extracted by analytically integrating the band-to-band tunneling generation rate over the tunneling region. The model well predicts the potential, subthreshold swing (SS), and transfer and output characteristics of DG TFETs. We analyze the… CONTINUE READING

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