A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Abstract

A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5… (More)

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Cite this paper

@article{Xu2014A2B, title={A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS}, author={Xiao Xu and Zheng Sun and Kangyang Xu and Xin Yang and Taufiq Alif Kurniawan and Toshihiko Yoshimasu}, journal={2014 IEEE International Symposium on Radio-Frequency Integration Technology}, year={2014}, pages={1-3} }