A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

Abstract

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2× 40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ∼50 and the ON–OFF ratios of ≥4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-μm-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 ± 2 dB across the 185–210-GHz band with 12.5–11.5 dBm of local oscillator (LO) pump power and >15-dB LO–RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.

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Cite this paper

@inproceedings{Andersson2016A1S, title={A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon}, author={Michael A. Andersson}, year={2016} }