A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications

@article{Joshin2003A1W,
  title={A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications},
  author={Kazukiyo Joshin and Toshihide Kikkawa and Hitoshi Hayashi and T. Maniwa and Shigeru Yokokawa and Meiso Yokoyama and Naoaki Adachi and Masahiko Takikawa},
  journal={IEEE International Electron Devices Meeting 2003},
  year={2003},
  pages={12.6.1-12.6.3}
}
AlGaN/GaN high electron mobility transistors (HEMTs) have been developed for current-collapse-free operation at high drain bias voltages. The newly designed single-chip GaN HEMT amplifier for W-CDMA base station applications achieves a record CW output power of 150 W with a high power-added efficiency (PAE) of 54% at 2.1 GHz. The amplifier, combined with a digital pre-distortion (DPD) system, also demonstrates a state of the art efficiency of 40% with an adjacent channel leakage power ratio… CONTINUE READING
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