A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM

@article{Kulkarni2007A1M,
  title={A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM},
  author={J. Kulkarni and Keejong Kim and K. Roy},
  journal={IEEE Journal of Solid-State Circuits},
  year={2007},
  volume={42},
  pages={2303-2313}
}
We propose a novel Schmitt trigger (ST) based differential 10-transistor SRAM (static random access memory) bitcell suitable for subthreshold operation. The proposed Schmitt trigger based bitcell achieves 1.56 x higher read static noise margin (SNM) ( Vdd = 400 mV) compared to the conventional 6T cell. The robust Schmitt trigger based memory cell exhibits built-in process variation tolerance that gives tight SNM distribution across the process corners. It utilizes differential operation and… Expand
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