A 160-GHz three-stage fully-differential amplifier in 40-nm CMOS


This paper presents a 160-GHz fully-differential power amplifier in 40-nm CMOS. A tapered gate-connection network was optimized which results in a reduction of the gate resistance and allows to achieve a maximum gain of 11.6 dB with a 3-dB bandwidth of 24 GHz from the three-stage amplifier. The measured saturated output power is 4.1 dBm and the measured 1… (More)
DOI: 10.1109/ICECS.2014.7049942


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