A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology

@article{Hamzaoglu2008A1D,
  title={A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology},
  author={Fatih Hamzaoglu and Kevin Zhang and Yih Wang and Hong Jo Ahn and Uddalak Bhattacharya and Zhanping Chen and Yong-Gee Ng and Andrei Pavlov and Ken Smits and Mark Bohr},
  journal={2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers},
  year={2008},
  pages={376-621}
}
We report a 153Mb SRAM design that is optimized for a 45nm high-K metal-gate technology (Mistry et al., 2007). The design contains fully integrated dynamic forward-body-bias to achieve lower voltage operation while keeping low the area and power overhead. The dynamic sleep design, which was developed at the 65nm node (Zhang et al., 2005), is further enhanced with op-amp-based active-feedback control and on-die programmable reference-voltage generator. The new sleep design reduces the effect of… CONTINUE READING
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