A 14 dBm 110–130 GHz power amplifier and doubler chain in 90 nm SiGe BiCMOS technology

@article{Yishay2016A1D,
  title={A 14 dBm 110–130 GHz power amplifier and doubler chain in 90 nm SiGe BiCMOS technology},
  author={Roee Ben Yishay and Danny Elad},
  journal={2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)},
  year={2016},
  pages={120-122}
}
A D-Band x2 frequency multiplier-amplifier chain implemented in an advanced 90 nm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 14 dBm and consists of input balun and push-push frequency doubler which drives a single-ended three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with 5… CONTINUE READING