A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range


This paper designed a 1-Mb HfOx-based embedded Resistive Random Access Memory (RRAM) device with a one-transistor-one-resistor (1T1R) structure, and systematically investigated its working temperature range. It noted that this embedded RRAM macro has a 1.6X working temperature range than previous design for some extreme environment. Using the peripheral… (More)
DOI: 10.1109/ASSCC.2017.8240244

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