A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology

Abstract

G. Naso, L. Botticchio, M. Castelli, C. Cerafogli, M. Cichocki, P. Conenna, A. D’Alessandro, L. De Santis, D. Di Cicco, W. Di Francesco, M.L. Gallese, G. Gallo, M. Incarnati, C. Lattaro, A. Macerola, G. Marotta, V. Moschiano, D. Orlandi, F. Paolini, S. Perugini, L. Pilolli, P. Pistilli, G. Rizzo, F. Rori, M. Rossini, G. Santin, E. Sirizotti, A. Smaniotto, U. Siciliani, M. Tiburzi, R. Meyer, A. Goda, B. Filipiak, T. Vali, M. Helm, R. Ghodsi

DOI: 10.1109/ISSCC.2013.6487707

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@inproceedings{Naso2013A13, title={A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology}, author={G. Naso and L. Botticchio and M. Castelli and C. Cerafogli and M. Cichocki and P. Conenna and A. D'Alessandro and Luca De Santis and D. Di Cicco and W. Di Francesco and M. L. Gallese and Girolamo Gallo and Michele Incarnati and C. Lattaro and Agostino Macerola and G. G. Marotta and Violante Moschiano and D. Orlandi and F. Paolini and S. Perugini and Luigi Pilolli and P. Pistilli and G. Rizzo and F. Rori and Massimo Rossini and Giovanni Santin and Emanuele Sirizotti and A. Smaniotto and U. Siciliani and M. Tiburzi and R. Meyer and A. Goda and B. Filipiak and Tommaso Vali and Mark Helm and Ramin Ghodsi}, booktitle={ISSCC}, year={2013} }