A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

@article{Kanda2008A11,
  title={A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology},
  author={Kazushige Kanda and Masaru Koyanagi and Toshio Yamamura and Koji Hosono and Masahiro Yoshihara and Toru Miwa and Yosuke Kato and Alex Mak and Siu Lung Chan and Frank Tsai and Raul Cernea and Binh Le and Eiichi Makino and Takashi Taira and Hiroyuki Otake and Norifumi Kajimura and Susumu Fujimura and Yoshiaki Takeuchi and Mikihiko Itoh and Masanobu Shirakawa and Dai Nakamura and Yuya Suzuki and Yuki Okukawa and Masatsugu Kojima and Kazuhide Yoneya and Takamichi Arizono and Toshiki Hisada and Shinji Miyamoto and Mitsuhiro Noguchi and Toshitake Yaegashi and Masaaki Higashitani and Fumitoshi Ito and Teruhiko Kamei and Gertjan Hemink and Tooru Maruyama and Kazumi Ino and Shigeo Ohshima},
  journal={2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers},
  year={2008},
  pages={430-625}
}
NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essential. To meet the stringent requirements, we develop a 16 Gb 4-level NAND flash memory in 43 nm CMOS technology. In 43 nm generation, gate-induced drain leakage (GIDL) influences the electrical field… CONTINUE READING