A 100 nm emitter transistor fabricated with direct EB writing for high-speed bipolar LSIs

Abstract

In recent years, the performance of bipolar transistors has been improved through the use of down-scaling and polysilicon base technologies. However. scaling1 down to under a quarter of a micron has been found to be very difficult because of the need for precise control of emitter size and junction depth. In response to this problem, a now transistor… (More)

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