A 10-nW 12-bit accurate analog storage cell with 10-aA leakage

  title={A 10-nW 12-bit accurate analog storage cell with 10-aA leakage},
  author={Micah O'Halloran and Rahul Sarpeshkar},
  journal={IEEE Journal of Solid-State Circuits},
Medium-term analog storage offers a compact, accurate, and low-power method of implementing temporary local memory that can be useful in adaptive circuit applications. The performance of these cells is characterized by the sampling accuracy and voltage droop that can be achieved with a given level of die area and power. Hand calculations suggest past implementations have not achieved minimum voltage droop due to uncompensated MOS leakage mechanisms. In this paper, the dominant sources of MOS… CONTINUE READING
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