• DOI:10.1109/TRANSDUCERS.2019.8808374
• Corpus ID: 201621456

A 10 GHz Single-Crystalline Scandium-Doped Aluminum Nitride Lamb-Wave Resonator

@article{Park2019A1G,
  title={A 10 GHz Single-Crystalline Scandium-Doped Aluminum Nitride Lamb-Wave Resonator},
  author={Mingyo Park and Zhijian Hao and Dea Gyu Kim and Andrew G. Clark and Rytis Dargis and Azadeh Ansari},
  journal={2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems \& Eurosensors XXXIII (TRANSDUCERS \& EUROSENSORS XXXIII)},
  year={2019},
  pages={450-453}
}

• Mingyo Park, Zhijian Hao, +3 authors A. Ansari
• Published 23 June 2019
• Materials Science, Physics
• 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

This work reports on the first demonstration of Lamb-wave resonators based on single-crystalline Scandium (Sc)-doped Aluminum Nitride (AlN) films operating at 8-10 GHz. Sc-AlN and AlN films are grown on Silicon substrates using molecular beam epitaxy (MBE). The electrodes are defined using electron beam lithography with sub-micron feature sizes to maximize the electromechanical coupling coefficient$(k_t^2)$. A high $k_t^2$ value of 4.8 % is reported at 9.9 GHz, with unloaded Quality factor (Qm) of 185, yielding $f \times {Q_m} \times k_t^2$ values of 74 GHz. The high $k_t^2$ is attributed to enhanced piezoelectric coefficients achieved due to single crystallinity, as well as Sc-doping. This work demonstrates higher performance resonators achieved by using single-crystalline Sc-AlN thin films compared to sputter-deposited films with sub-micron thicknesses, required for 5G filter applications.