A 1.5-V 2–9.6-GHz Inductorless Low-Noise Amplifier in 0.13-$\mu{\hbox {m}} $ CMOS

@article{Li2007A12,
  title={A 1.5-V 2–9.6-GHz Inductorless Low-Noise Amplifier in 0.13-\$\mu\{\hbox \{m\}\} \$ CMOS},
  author={Qiang Li and Yue Ping Zhang},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2007},
  volume={55},
  pages={2015-2023}
}
This paper presents an inductorless low-noise amplifier (LNA) design for an ultra-wideband (UWB) receiver front-end. A current-reuse gain-enhanced noise canceling architecture is proposed, and the properties and limitations of the gain-enhancement stage are discussed. Capacitive peaking is employed to improve the gain flatness and -3-dB bandwidth, at the cost of absolute gain value. The LNA circuit is fabricated in a 0.13-mum triple-well CMOS technology. Measurement result shows that a small… CONTINUE READING
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