A 1.05V 1.6mW 0.45°C 3σ-resolution ΔΣ-based temperature sensor with parasitic-resistance compensation in 32nm CMOS

@article{Li2009A11,
  title={A 1.05V 1.6mW 0.45°C 3σ-resolution ΔΣ-based temperature sensor with parasitic-resistance compensation in 32nm CMOS},
  author={Yee William Li and Hasnain Lakdawala and Arijit Raychowdhury and Greg Taylor and Krishnamurthy Soumyanath},
  journal={2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers},
  year={2009},
  pages={340-341,341a}
}
In the multicore era, thermal/power management is essential in order to meet platform-performance and energy-efficiency requirements. Accurate temperature measurements are required to reliably maximize microprocessor performance under a thermal envelope. Furthermore, in a large multicore microprocessor, multiple-location hot-spot temperature measurements are critical to limit leakage through load balancing. The requirements for absolute inaccuracy are modest (≪8°C), but good relative inaccuracy… CONTINUE READING
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