A 0.8–2.1 GHz broadband power amplifier

@article{Wenyuan2011A0G,
  title={A 0.8–2.1 GHz broadband power amplifier},
  author={Li Wenyuan and Wang Hai},
  journal={2011 IEEE 13th International Conference on Communication Technology},
  year={2011},
  pages={1050-1053}
}
A broadband power amplifier operating from 0.8 GHz to 2.1 GHz is designed with 0.18 µm SiGe BiCMOS technology, which will be used in GSM, TD-SCDMA, and RFID systems. The proposed power amplifier adopted broadband matching, compensated matching, and negative feedback technique. The simulation results show that under a supply voltage of 3.3 V, the power amplifier demonstrates 35 dB power gain, 30 dBm output power, and higher than 25% power added efficiency. Gain ripple is lower than 2.5 dB and… CONTINUE READING

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