A 0.5-V 5.2-fJ/Conversion-Step Full Asynchronous SAR ADC With Leakage Power Reduction Down to 650 pW by Boosted Self-Power Gating in 40-nm CMOS

@article{Sekimoto2013A05,
  title={A 0.5-V 5.2-fJ/Conversion-Step Full Asynchronous SAR ADC With Leakage Power Reduction Down to 650 pW by Boosted Self-Power Gating in 40-nm CMOS},
  author={Ryota Sekimoto and Akira Shikata and Kentaro Yoshioka and Tadahiro Kuroda and Hiroki Ishikuro},
  journal={IEEE Journal of Solid-State Circuits},
  year={2013},
  volume={48},
  pages={2628-2636}
}
This paper presents an ultralow-power and ultralow-voltage SAR ADC. Full asynchronous operation and boosted self-power gating are proposed to improve conversion accuracy and reduce static leakage power. By designing with MOSFET of high threshold voltage (HVt) and low threshold voltage (LVt), the leakage power is reduced without decrease of maximum sampling frequency. The test chip in 40-nm CMOS process has successfully reduced leakage power by 98%, and it achieves 8.2-bit ENOB and while… CONTINUE READING
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