A 0.1-14 GHz wideband SiGe BiFET power amplifier

@article{Park2006A0G,
  title={A 0.1-14 GHz wideband SiGe BiFET power amplifier},
  author={Jonghoo Park and Pingxi Ma and Marco Racanelli and Zhenqiang Ma},
  journal={Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
  year={2006},
  pages={4 pp.-}
}
In this paper, a wide bandwidth power amplifier, employing a MOS-HBT-HBT (BiFET) cascode as the unit section of distributed amplifier to provide improved output power as well as bandwidth, is designed. A four section distributed amplifier delivers a maximum output power of 22.8 dBm at 13 dBm input power, with -3 dB bandwidth of 13.9 GHz (0.1-14 GHz). The bandwidth and RF power achieved from this amplifier demonstrate that SiGe BiFET wideband power amplifiers have the potential to offer high… CONTINUE READING

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