A 0.1-<formula formulatype="inline"><tex>$\mu{\hbox {m}}$</tex></formula> 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Abstract

A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal times2… (More)

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@article{Kang2007A0F, title={A 0.1-\$\mu\{\hbox \{m\}\}\$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation}, author={Sangbeom Kang and Woo Yeong Cho and Beak-Hyung Cho and Kwang-Jin Lee and Chang-Soo Lee and Hyung-Rok Oh and Byung-Gil Choi and Qi Wang and Hye-Jin Kim and Mu-Hui Park and Yu Hwan Ro and Suyeon Kim and Choong-Duk Ha and Ki-Sung Kim and Young-Ran Kim and Du-Eung Kim and Choong-Keun Kwak and Hyun-Geun Byun and Gitae Jeong and Hongsik Jeong and Kinam Kim and Y. Shin}, journal={IEEE Journal of Solid-State Circuits}, year={2007}, volume={42}, pages={210-218} }