• Published in
    55th Annual Device Research…
    1997

A 0.1 /spl mu/m IHLATI (indium halo by large angle tilt implant) nMOSFET for 1.0 V low power application

@article{Choi1997A0,
  title={A 0.1 /spl mu/m IHLATI (indium halo by large angle tilt implant) nMOSFET for 1.0 V low power application},
  author={Young Jin Choi and Byung-Gook Park and Jong Duk Lee},
  journal={1997 55th Annual Device Research Conference Digest},
  year={1997},
  pages={16-17}
}
As the MOSFET technology is extended into the 0.1 /spl mu/m gate length regime and the supply voltage is scaled to 1-2V, reduction of the threshold voltage (VT) should be pursued more aggressively to obtain sufficient drain current. With scaling down the threshold voltage, it is important to reduce SCE (short channel effect), i.e. DIBL and V/sub T/ roll-off. In this paper, we present an implementation and the device characteristics of O.l/spl mu/m IHLATI (indium halo by large angle tilt implant… CONTINUE READING

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References

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